International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides is explored by means of nanosecond laser annealing (NLA) combined to rapid thermal processing (RTP) to tentatively obtain ohmic contacts within a limited thermal budget. Leveraging sheet resistance and X-ray diffraction measurements, coupled to electron microscopy observations, the various phases obtained after NLA and after a subsequent RTP are identified and the involved mechanisms discussed
Current post-process heat treatments applied to selective laser melting produced Ti-6Al-4V do not ac...
Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room...
ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium d...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceThe formation of Ti based contacts in new image sensors CMOS technologies is l...
Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les...
Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
Current post-process heat treatments applied to selective laser melting produced Ti-6Al-4V do not ac...
Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room...
ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium d...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceIn view of contacts for advanced image sensors, the formation of Ti silicides ...
International audienceThe formation of Ti based contacts in new image sensors CMOS technologies is l...
Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les...
Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resis...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
The aim of this work is to investigate the laser-induced silicide and germanosilicide formation in d...
Current post-process heat treatments applied to selective laser melting produced Ti-6Al-4V do not ac...
Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room...
ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium d...