Add to ORKGIn this paper we propose double gate transistor i.e. FINFETS circuits. It is the substitute of bulk CMOS that mean without any compromise in fabrication process except one or two changes. Actually bulk CMOS suffers high power consumption and high leakage currents .so we implement a various novel circuits i.e FINFETS logic design style in 32nm technology and analyzing various parameters like power dissipation, delay, frequency are observed in this paper. In here we notice that less power consumption in FINFETS when compared to ordinary bulk CMOS. We also check the other submicron technology compared to that this submicron technology got less power consumption
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power trade...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
AbstractFrom the commencement of CMOS scaling, the simple MOSFETs are not up to the performance due ...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power trade...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
AbstractFrom the commencement of CMOS scaling, the simple MOSFETs are not up to the performance due ...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...