Add to ORKGVirtual Fabrication of sub-40nm Bulk MOSFET is carried out under channel engineering and source drain engineering process. These structures enable more aggressive device scaling in nano-scale region because of their ability to control short channel effects. How ever during scaling the junction depth should also be scaled down, which increases parasitic resistance so silicidation technique has been applied to reduce their effects on device. Analog performance has been measured in terms of gm, gds ,Av ,fT and fmax .The simulation result predict that gm is 3.75ms for engineered MOSFET as compared to nonengineered MOSFET with gm of 2.9ms for similar gate length, similarly Av for engineered device is 17.5db and for non-engineered device is 6.96d...
This thesis describes a comprehensive, simulation based scaling study – including device design, per...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In th...
The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been gove...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The stu...
Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequen...
The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for ...
Aggressive voltage scaling into the subthreshold operating region holds great promise for applicatio...
Vertical MOSFETs are gaining importance for VLSI circuit integration and for reducing the feature si...
Conventional MOSFET has already passed lower than 45nm transistor fabrication. As silicon is now hit...
Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semicondu...
The classical planar Metal Oxide Semiconductor Field Effect Transistors (MOSFET) is fabricated by ox...
Heterostructure engineering in III-V vertical nanowire (VNW) MOSFETs enables tuning of transconducta...
As device dimensions are scaled beyond the 45nm node, new device architectures and new materials ne...
This thesis describes a comprehensive, simulation based scaling study – including device design, per...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In th...
The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been gove...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The stu...
Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequen...
The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for ...
Aggressive voltage scaling into the subthreshold operating region holds great promise for applicatio...
Vertical MOSFETs are gaining importance for VLSI circuit integration and for reducing the feature si...
Conventional MOSFET has already passed lower than 45nm transistor fabrication. As silicon is now hit...
Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semicondu...
The classical planar Metal Oxide Semiconductor Field Effect Transistors (MOSFET) is fabricated by ox...
Heterostructure engineering in III-V vertical nanowire (VNW) MOSFETs enables tuning of transconducta...
As device dimensions are scaled beyond the 45nm node, new device architectures and new materials ne...
This thesis describes a comprehensive, simulation based scaling study – including device design, per...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In th...