Add to ORKGTerahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies. © 2013 American Institute of Physics
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. T...
In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For...
Accurately measuring and controlling the electrical properties of semiconductor nanowires is of para...
Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates w...
GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on g...
Silicon nanowires (SiNWs) were etched on Si (100), (110), and (111) substrates. Slanted nanowires wi...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
This paper presents the experimental studies of the generation of terahertz radiation in periodic ar...
GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on g...
Terahertz emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond opt...
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are...
Terahertz radiation is electromagnetic waves with frequencies from 0.1-10 THz. THz radiation can pas...
We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bu...
We report on the emission of terahertz (THz) radiation from p-doped and intentionally undoped GaAs n...
GaAs nanowires are promising candidates for advanced optoelectronic devices, despite their high surf...
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. T...
In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For...
Accurately measuring and controlling the electrical properties of semiconductor nanowires is of para...
Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates w...
GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on g...
Silicon nanowires (SiNWs) were etched on Si (100), (110), and (111) substrates. Slanted nanowires wi...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
This paper presents the experimental studies of the generation of terahertz radiation in periodic ar...
GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on g...
Terahertz emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond opt...
The unique features of nanowires (NW), such as the high aspect ratio and extensive surface area, are...
Terahertz radiation is electromagnetic waves with frequencies from 0.1-10 THz. THz radiation can pas...
We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bu...
We report on the emission of terahertz (THz) radiation from p-doped and intentionally undoped GaAs n...
GaAs nanowires are promising candidates for advanced optoelectronic devices, despite their high surf...
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. T...
In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For...
Accurately measuring and controlling the electrical properties of semiconductor nanowires is of para...