Add to ORKGWe report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. © 2018 Elsevier B.V
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the d...
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on...
There is a demand for more efficient sources of electromagnetic radiation in the terahertz (THz, 101...
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the conte...
We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suit...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films depo...
The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm ...
A 1.56 μm femtosecond fiber laser was used to excite p- and n-type InAs and InSb semiconductors at t...
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. T...
International audienceSelf-organized InAs quantum dots (QDs) are grown in the Stranski–Krastanov reg...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorgani...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the d...
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on...
There is a demand for more efficient sources of electromagnetic radiation in the terahertz (THz, 101...
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the conte...
We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suit...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films depo...
The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm ...
A 1.56 μm femtosecond fiber laser was used to excite p- and n-type InAs and InSb semiconductors at t...
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. T...
International audienceSelf-organized InAs quantum dots (QDs) are grown in the Stranski–Krastanov reg...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorgani...
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping leve...
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the d...
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on...
There is a demand for more efficient sources of electromagnetic radiation in the terahertz (THz, 101...