Power dissipation in one of the major concerns of VLSI circuit designers with the launch of battery held devices and applications, power consumption in the circuit also increased exponentially. Leakage current became an overriding factor in nanometer CMOS design technologies. This paper provides a comprehensive study, analysis and comparison of leakage power reduction technique such as zigzag approach, multi threshold approach, sleepy stack, dual sleep, transistor gating etc.. All the above methods are tested and analyzed using microwind EDA tool
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Leakage power is a growing concern in modern technology nodes. In some current and emerging applicat...
An electronic system/appliance/portable device with high speed, low power, and feasible area has bec...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Abstract:-Leakage current in CMOS circuit technology is a major concern for technology node below to...
There is an increasing demand for portable devices powered up by battery, this led the manufacturers...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
Power dissipation is a key consideration in the design of nano-scale CMOS VLSI circuits. Various tec...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
As the threshold voltage is reduced due to voltage scaling in CMOS technology, it leads to increase ...
Abstract — Leakage power dissipation has become a sizable proportion of the total power dissipation ...
Static power consumption is a major concern in nanometre technologies. Along with technology scaling...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Leakage power is a growing concern in modern technology nodes. In some current and emerging applicat...
An electronic system/appliance/portable device with high speed, low power, and feasible area has bec...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Abstract:-Leakage current in CMOS circuit technology is a major concern for technology node below to...
There is an increasing demand for portable devices powered up by battery, this led the manufacturers...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
Power dissipation is a key consideration in the design of nano-scale CMOS VLSI circuits. Various tec...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
As the threshold voltage is reduced due to voltage scaling in CMOS technology, it leads to increase ...
Abstract — Leakage power dissipation has become a sizable proportion of the total power dissipation ...
Static power consumption is a major concern in nanometre technologies. Along with technology scaling...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Leakage power is a growing concern in modern technology nodes. In some current and emerging applicat...
An electronic system/appliance/portable device with high speed, low power, and feasible area has bec...