The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 1...
The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature re...
The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of tr...
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photo...
The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4...
The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investi...
Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limite...
In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, T...
The optical properties of Tl2InGaS4 layered single crystals have been studied by means of transmissi...
In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGa...
A special new design from melt based on the Bridgman technique has been applied to prepare Tl2Te3 si...
Tl3InSe4 single crystal has been successfully prepared by the Bridgman crystal growth technique. The...
Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered cryst...
The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmiss...
The main physical properties of Tl4Se3S single crystals were investigated for the first time. Partic...
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-volt...
The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature re...
The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of tr...
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photo...
The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4...
The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investi...
Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limite...
In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, T...
The optical properties of Tl2InGaS4 layered single crystals have been studied by means of transmissi...
In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGa...
A special new design from melt based on the Bridgman technique has been applied to prepare Tl2Te3 si...
Tl3InSe4 single crystal has been successfully prepared by the Bridgman crystal growth technique. The...
Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered cryst...
The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmiss...
The main physical properties of Tl4Se3S single crystals were investigated for the first time. Partic...
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-volt...
The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature re...
The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of tr...
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photo...