The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with various surface indices is simulated with Stillinger-Weber type interatomic potentials. The growth is realized by means of a continuum Monte Carlo method and the radial distribution functions are evaluated for various cases
Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzman...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.Includ...
The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial fil...
n this work we simulated the growth of amorphous silicon on a substrate of a two-layer-slab of cryst...
The bulk phase behavior of silicon-germanium alloys is investigated by means of constant pressure Mo...
In recent years the growth of epitaxial layers and strained layer superlattices have been simulated ...
The epitaxial growth of Ge on Si(OO1) is simulated by employing a hybrid approach based on molecular...
A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-...
For Si-O-F and Si-O-Cl systems, Stillinger-Weber (SW)-type potential sets were developed based on in...
We have developed an efficiently scalable molecular dynamics code based on a modified Stillinger–Web...
The structural properties of binary silicon-germanium alloys are investigated by means of large-scal...
In this thesis, the Monte Carlo method is applied for the study of semiconductor surfaces. The focus...
Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) si...
International audienceThe art of deriving classical potential consists in finding the correct balanc...
Understanding the surface properties of amorphous silicon (a-Si) is extremely important for effectiv...
Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzman...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.Includ...
The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial fil...
n this work we simulated the growth of amorphous silicon on a substrate of a two-layer-slab of cryst...
The bulk phase behavior of silicon-germanium alloys is investigated by means of constant pressure Mo...
In recent years the growth of epitaxial layers and strained layer superlattices have been simulated ...
The epitaxial growth of Ge on Si(OO1) is simulated by employing a hybrid approach based on molecular...
A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-...
For Si-O-F and Si-O-Cl systems, Stillinger-Weber (SW)-type potential sets were developed based on in...
We have developed an efficiently scalable molecular dynamics code based on a modified Stillinger–Web...
The structural properties of binary silicon-germanium alloys are investigated by means of large-scal...
In this thesis, the Monte Carlo method is applied for the study of semiconductor surfaces. The focus...
Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) si...
International audienceThe art of deriving classical potential consists in finding the correct balanc...
Understanding the surface properties of amorphous silicon (a-Si) is extremely important for effectiv...
Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzman...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.Includ...
The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial fil...
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