This paper provides theoretical insight on how circular Schottky photodiodes in bulk CMOS can be optimized for certain integrated receiver applications. An optimal photodiode size is analytically demonstrated and the effects of a metal plate reflector are simulated using a transfer-matrix method, both for frontside and backside illumination. Finally, a distributed circuit model is presented, which deviates from the classical lumped model for large photodiodes or sheet resistances. The presented methodologies can also be extended to other types of photodetectors
This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors wi...
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCP...
Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with ext...
This thesis describes high-speed photodiodes in standard CMOS technology which allow monolithic inte...
© 2017 IEEE. This paper presents N-well Schottky diodes for high speed optical detection in 28nm CMO...
Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-spee...
© 2017 OSA. In this paper, the use of Schottky diodes in CMOS as 1310nm photodetectors is proposed. ...
Abstract: Analyses ofthe influence ofdrfferent geometries (layouts) and structures of high-speed CMO...
Abstract—Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications...
The influence of different geometries (layouts) and structures of high-speed photodiodes in fully st...
The influence of two different geometries (layouts) and two structures of high-speed photodiodes in ...
This project concentrates on the design, fabrication and characterization of compound semiconductor ...
Includes bibliographical references (pages [96]-100)Metal-semiconductor-metal (MSM) photodetectors a...
Two key parameters for RCE photodetectors that govern their suitability for ultrafast optical commun...
During the last years, applications such as optical storage systems or the optical short haul commun...
This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors wi...
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCP...
Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with ext...
This thesis describes high-speed photodiodes in standard CMOS technology which allow monolithic inte...
© 2017 IEEE. This paper presents N-well Schottky diodes for high speed optical detection in 28nm CMO...
Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-spee...
© 2017 OSA. In this paper, the use of Schottky diodes in CMOS as 1310nm photodetectors is proposed. ...
Abstract: Analyses ofthe influence ofdrfferent geometries (layouts) and structures of high-speed CMO...
Abstract—Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications...
The influence of different geometries (layouts) and structures of high-speed photodiodes in fully st...
The influence of two different geometries (layouts) and two structures of high-speed photodiodes in ...
This project concentrates on the design, fabrication and characterization of compound semiconductor ...
Includes bibliographical references (pages [96]-100)Metal-semiconductor-metal (MSM) photodetectors a...
Two key parameters for RCE photodetectors that govern their suitability for ultrafast optical commun...
During the last years, applications such as optical storage systems or the optical short haul commun...
This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors wi...
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCP...
Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with ext...