Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rate of change of the indirect band gap was found as γ = −6.6 × 10−4 eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the ...
Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in th...
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-qualit...
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the...
Gasanly, Nizami/0000-0002-3199-6686WOS: 000382091500005Optical properties of GaSe single crystals ha...
GaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measu...
Temperature-dependent transmission and room temperature reflection measurements were carried out on ...
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through temperat...
Optical properties of GaS0.25Se0.75 single crystals were investigated by means of temperature -depen...
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through tempera...
The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmissio...
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied ...
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have bee...
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied ...
The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implante...
Optical and thermoluminescence properties on GaS0.75Se0.25 crystals were investigated in the present...
Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in th...
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-qualit...
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the...
Gasanly, Nizami/0000-0002-3199-6686WOS: 000382091500005Optical properties of GaSe single crystals ha...
GaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measu...
Temperature-dependent transmission and room temperature reflection measurements were carried out on ...
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through temperat...
Optical properties of GaS0.25Se0.75 single crystals were investigated by means of temperature -depen...
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through tempera...
The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmissio...
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied ...
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have bee...
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied ...
The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implante...
Optical and thermoluminescence properties on GaS0.75Se0.25 crystals were investigated in the present...
Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in th...
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-qualit...
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the...