Infrared reflection spectra are registered in the frequency range of 50-2000 cm(-1) for Ag3Ga5S9 and Ag3In5S9 single crystals grown by Bridgman method. Four infrared-active modes are detected in spectra. By replacing the gallium atoms by indium ones in Ag3Ga5S9 crystal, the observed bands shift to low frequencies. Spectral dependence of optical parameters; real and imaginary parts of the dielectric function, the function of energy losses, refractive index, absorption index and absorption coefficient were calculated from reflectivity experiments. The frequencies of transverse and longitudinal optical modes and oscillator strength were also determined. The highest frequency bands observed in an infrared spectra of studied crystals were tentat...
The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed ...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means...
Infrared reflection spectra are obtained in the frequency range of 50-2000 cm(-1) for AgIn5S8 and Cu...
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-...
Experimental spectra for copper gallium (indium) ternary selenides (tellurides) crystals, measured i...
AgGaGeS4 is an emerging material with promising nonlinear properties in the near- and mid-infrared s...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman method. ...
We measured room-temperature reflectivity in the far-infrared region (100-700 cm- ’) of In,-,Ga&P1-,...
Transmission and reflection infrared spectra of triglycine sulphate crystal plates in several orient...
Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsome...
Far-infrared reflection spectra were determined, for the first time, for single crystals of guanidin...
The vibrational spectra of Ag₃ and Ag₄ are recorded in the far-infrared between 100 and 220 cm-1 usi...
International audienceThe components of the frequency-dependent complex refractive index were determ...
The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed ...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means...
Infrared reflection spectra are obtained in the frequency range of 50-2000 cm(-1) for AgIn5S8 and Cu...
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-...
Experimental spectra for copper gallium (indium) ternary selenides (tellurides) crystals, measured i...
AgGaGeS4 is an emerging material with promising nonlinear properties in the near- and mid-infrared s...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman method. ...
We measured room-temperature reflectivity in the far-infrared region (100-700 cm- ’) of In,-,Ga&P1-,...
Transmission and reflection infrared spectra of triglycine sulphate crystal plates in several orient...
Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsome...
Far-infrared reflection spectra were determined, for the first time, for single crystals of guanidin...
The vibrational spectra of Ag₃ and Ag₄ are recorded in the far-infrared between 100 and 220 cm-1 usi...
International audienceThe components of the frequency-dependent complex refractive index were determ...
The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed ...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means...