The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range hopping above and below 100 K, respectively. At high temperatures (T > 100 K) the conductivity anisotropy, s, decreased sharply with decreasing temperature following the law s proportional to exp(-E(s)/kT). The anisotropy activation energ...
Understanding thermal transport properties of materials is essential for both device applications an...
Anisotropie media are of great importance in practice and in scientific research. Orthogonal (Orth.)...
Indium sulphide (INS) is a III-VI compound semiconductor\ud and crystallizes in the orthorhombic str...
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the tem...
Due to the importance of the TlInSe2 crystal as neutron and gamma-ray detectors, its electrical and ...
The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain sin...
GaTe and InTe are III-VI semiconductors with layered structures which have large anisotropy in elect...
The measurements of electrical conductivity along (alternating electric field) and across (direct el...
Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing ...
Smiadak DM, Claes R, Perez N, et al. Quasi-1D electronic transport and isotropic phonon transport in...
The optical reflectivity as a function of temperature of the title compound for x = 0,5 and 12 has ...
The anisotropy of the electrical transport properties at room temperature of the α- and β-phase of (...
Changes of the conductivities along and across the layers as well as of the Hall coefficient are inv...
The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered c...
Temperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by me...
Understanding thermal transport properties of materials is essential for both device applications an...
Anisotropie media are of great importance in practice and in scientific research. Orthogonal (Orth.)...
Indium sulphide (INS) is a III-VI compound semiconductor\ud and crystallizes in the orthorhombic str...
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the tem...
Due to the importance of the TlInSe2 crystal as neutron and gamma-ray detectors, its electrical and ...
The temperature dependences of the electrical resistivity and Hall mobility of p-type InTe chain sin...
GaTe and InTe are III-VI semiconductors with layered structures which have large anisotropy in elect...
The measurements of electrical conductivity along (alternating electric field) and across (direct el...
Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing ...
Smiadak DM, Claes R, Perez N, et al. Quasi-1D electronic transport and isotropic phonon transport in...
The optical reflectivity as a function of temperature of the title compound for x = 0,5 and 12 has ...
The anisotropy of the electrical transport properties at room temperature of the α- and β-phase of (...
Changes of the conductivities along and across the layers as well as of the Hall coefficient are inv...
The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered c...
Temperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by me...
Understanding thermal transport properties of materials is essential for both device applications an...
Anisotropie media are of great importance in practice and in scientific research. Orthogonal (Orth.)...
Indium sulphide (INS) is a III-VI compound semiconductor\ud and crystallizes in the orthorhombic str...