We present a variational method to compute the binding energies of helium-like impurities in finite parabolic GaAs-Ga1-xAlxAs quantum wells. The effects of band nonparabolicity in the conduction band are taken into account within the effective mass approximation. The dependence of the impurity binding energy on the applied electric field and the impurity position is also discussed together with the polarization effect for all cases. (C) 2000 Academic Press
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impu...
Using a variational approach, we have calculated the hydrostatic pressure and electric field effects...
We have calculated the effects of electric and intense laser fields on the binding energies of the g...
We present a variational method to compute the binding energies for a hydrogenic impurity located at...
In the present theoretical study, we investigate the influence of external fields (electric and/or m...
The electric field dependence of polarizability and binding energy of shallow-donor impurities in gr...
The electric field dependence of polarizability and binding energy of shallow-donor impurities in gr...
We have described the calculation of hydrogenic impurity binding energies in cylindrical GaAs-Ga1-xA...
In this work, we directly calculate the ground state energies for an electron in quantum well wires ...
We have investigated the effects of the magnetic field which is directed perpendicular to the well o...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a...
The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW...
Using a variational procedure within the effective-mass approximation, we have made a theoretical st...
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated...
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impu...
Using a variational approach, we have calculated the hydrostatic pressure and electric field effects...
We have calculated the effects of electric and intense laser fields on the binding energies of the g...
We present a variational method to compute the binding energies for a hydrogenic impurity located at...
In the present theoretical study, we investigate the influence of external fields (electric and/or m...
The electric field dependence of polarizability and binding energy of shallow-donor impurities in gr...
The electric field dependence of polarizability and binding energy of shallow-donor impurities in gr...
We have described the calculation of hydrogenic impurity binding energies in cylindrical GaAs-Ga1-xA...
In this work, we directly calculate the ground state energies for an electron in quantum well wires ...
We have investigated the effects of the magnetic field which is directed perpendicular to the well o...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a...
The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW...
Using a variational procedure within the effective-mass approximation, we have made a theoretical st...
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated...
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impu...
Using a variational approach, we have calculated the hydrostatic pressure and electric field effects...
We have calculated the effects of electric and intense laser fields on the binding energies of the g...