We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms
Small amounts of Ge atoms are deposited on Si(111)-7×7 surfaces at room temperature (RT) and at 100 ...
The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) ha...
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the...
We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculation...
We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) s...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
The positions of germanium atoms adsorbed on Si(111) surfaces have been determined with X-ray standi...
*Çakmak, M. ( Aksaray, Yazar )We have examined the Si(111) surface with 1/3 monolayer of group-IV el...
We have performed first-principles total energy calculations to investigate the adsorption process o...
The decomposition of Ge2H6 on Si(100)(2 x 1) was investigated on different adsorption models of frag...
The decomposition of GeH4 on Si(100)(2 x 1) was investigated on different adsorption models of fragm...
We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double...
Calculations (DFT, B3LYP, 6-31 G**) chemical shifts core-level components of germanium atoms, whicha...
We present first-principles density-functional calculations for the adsorption of water on the Ge(10...
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab init...
Small amounts of Ge atoms are deposited on Si(111)-7×7 surfaces at room temperature (RT) and at 100 ...
The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) ha...
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the...
We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculation...
We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) s...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
The positions of germanium atoms adsorbed on Si(111) surfaces have been determined with X-ray standi...
*Çakmak, M. ( Aksaray, Yazar )We have examined the Si(111) surface with 1/3 monolayer of group-IV el...
We have performed first-principles total energy calculations to investigate the adsorption process o...
The decomposition of Ge2H6 on Si(100)(2 x 1) was investigated on different adsorption models of frag...
The decomposition of GeH4 on Si(100)(2 x 1) was investigated on different adsorption models of fragm...
We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double...
Calculations (DFT, B3LYP, 6-31 G**) chemical shifts core-level components of germanium atoms, whicha...
We present first-principles density-functional calculations for the adsorption of water on the Ge(10...
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab init...
Small amounts of Ge atoms are deposited on Si(111)-7×7 surfaces at room temperature (RT) and at 100 ...
The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) ha...
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the...
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