Add to ORKGIn this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated
Power density and efficiency are amongst the design features that are becoming extremely important i...
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nit...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are i...
Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MO...
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode ga...
This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static...
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for ...
© 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics application...
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential ...
Abstract: This thesis shows a novel and unique method of how Gallium Nitride Field Effect Transistor...
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve...
Wide band gap devices offer significant advantages such as high power density, fast switching and hi...
The breakdown strength and electron mobility of gallium nitride (GaN) are almost ten and three times...
This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact mode...
Power density and efficiency are amongst the design features that are becoming extremely important i...
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nit...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...
In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are i...
Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MO...
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode ga...
This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static...
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for ...
© 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics application...
The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential ...
Abstract: This thesis shows a novel and unique method of how Gallium Nitride Field Effect Transistor...
Gallium nitride high electron mobility transistors (GaN-HEMTs) have low capacitances and can achieve...
Wide band gap devices offer significant advantages such as high power density, fast switching and hi...
The breakdown strength and electron mobility of gallium nitride (GaN) are almost ten and three times...
This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact mode...
Power density and efficiency are amongst the design features that are becoming extremely important i...
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nit...
International audienceIn this paper, the authors present a behavioral model of a GaN normally ON HEM...