Add to ORKGThe current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.M.S. - Master of Scienc
An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconduct...
In this paper we present the results of modeling concerning current-voltage (V < 0) characteristics ...
AbstractThin SiO2 films with thickness 5-10nm were grown at 700°C in dry ambient. The devices with o...
Bu çalışmada kapasitör özelliği gösteren Metal-Oksit-Yarıiletken (MOS) yapılar ile çalışılmıştır. Si...
We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semico...
This paper proposes a physics-based model of flat-band capacitance Cfb for metal oxide thin-film tra...
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrica...
A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transp...
We have deduced the analytical expression of the tunneling current across a thin oxide layer for a M...
Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on...
The continual dimensional scaling of MOS devices requires a recurrent search for new materials for e...
The sub-microscale miniaturisation of the metal-oxide-semiconductor field-effect transistor opens th...
As the Silicon based MOSFET scaling is close to an end, high mobility III-V MOSFET is considered one...
The task of the thesis was studding of tantalum capacitors with solid electrolytes properties. Ta – ...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconduct...
In this paper we present the results of modeling concerning current-voltage (V < 0) characteristics ...
AbstractThin SiO2 films with thickness 5-10nm were grown at 700°C in dry ambient. The devices with o...
Bu çalışmada kapasitör özelliği gösteren Metal-Oksit-Yarıiletken (MOS) yapılar ile çalışılmıştır. Si...
We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semico...
This paper proposes a physics-based model of flat-band capacitance Cfb for metal oxide thin-film tra...
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrica...
A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transp...
We have deduced the analytical expression of the tunneling current across a thin oxide layer for a M...
Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on...
The continual dimensional scaling of MOS devices requires a recurrent search for new materials for e...
The sub-microscale miniaturisation of the metal-oxide-semiconductor field-effect transistor opens th...
As the Silicon based MOSFET scaling is close to an end, high mobility III-V MOSFET is considered one...
The task of the thesis was studding of tantalum capacitors with solid electrolytes properties. Ta – ...
This chapter builds a deep understanding of the modern MOS (metal–oxide–semiconductor) structures. T...
An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconduct...
In this paper we present the results of modeling concerning current-voltage (V < 0) characteristics ...
AbstractThin SiO2 films with thickness 5-10nm were grown at 700°C in dry ambient. The devices with o...