The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron–phonon coupling parameter λ are obtained by measuring the linewidth of the spin–split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of λ for the upper and lower spin–split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS2. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS2 on ...
© 2018 IOP Publishing Ltd We present a study on the growth and characterization of high-quality sin...
Van der Waals (vdW) materials offer a perspective to revolutionize basically every facet of nowadays...
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applic...
© 2018 Elsevier B.V. The electron–phonon coupling strength in the spin–split valence band maximum of...
18The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 ...
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS2 is...
The electronic structure of a single MoS2 monolayer is investigated with all electron first-principl...
We study the effect of Coulomb interactions on the low-energy band structure of single-layer transit...
Presentation given at the Workshop on Correlations, Criticality, and Coherence in Quantum Systems he...
We find a wave vector dependence of the band symmetries for MoS2(0001) in angle-resolved photoemissi...
Coulomb interactions are crucial in determining the ground state of an ideal two-dimensional electro...
We find a wave vector dependence of the band symmetries for MoS2(0 0 0 1) in angle-resolved photoemi...
As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electr...
We use density functional theory to explore the possibility of making the semiconducting transition-...
The excited state of a particularly selected spin- and valley-polarized electron is gathering growin...
© 2018 IOP Publishing Ltd We present a study on the growth and characterization of high-quality sin...
Van der Waals (vdW) materials offer a perspective to revolutionize basically every facet of nowadays...
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applic...
© 2018 Elsevier B.V. The electron–phonon coupling strength in the spin–split valence band maximum of...
18The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 ...
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS2 is...
The electronic structure of a single MoS2 monolayer is investigated with all electron first-principl...
We study the effect of Coulomb interactions on the low-energy band structure of single-layer transit...
Presentation given at the Workshop on Correlations, Criticality, and Coherence in Quantum Systems he...
We find a wave vector dependence of the band symmetries for MoS2(0001) in angle-resolved photoemissi...
Coulomb interactions are crucial in determining the ground state of an ideal two-dimensional electro...
We find a wave vector dependence of the band symmetries for MoS2(0 0 0 1) in angle-resolved photoemi...
As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electr...
We use density functional theory to explore the possibility of making the semiconducting transition-...
The excited state of a particularly selected spin- and valley-polarized electron is gathering growin...
© 2018 IOP Publishing Ltd We present a study on the growth and characterization of high-quality sin...
Van der Waals (vdW) materials offer a perspective to revolutionize basically every facet of nowadays...
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applic...