On the stability of the DC and RF gain of GaInP/GaAs HBTs
- Borgarino M.
- Plana R.
- Tartarin J. G.
- Delage S.
- Blanck H.
- Fantini F.
- Graffeuil J.
Publication date
January 1996
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrated. The effects observed are explained in terms of Carbon passivation by Hydrogen atoms released from passivation/semiconductor interface during the stress
Add to ORKG