This paper presents an overview on the SiGe technology that could be used to design the future communications systems. Both bipolar and unipolar technology are available. Nevertheless bipolar technology are very successful in term of noise, linearity power and reliability and they will outperform the III-V devices for applications at least up to 20 GHz
This paper presents an overview of SiGe technologies and their corresponding noise properties both i...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
This paper presents an overview on the SiGe technology that could be used to design the future commu...
Advances in wireless communications and information processing systems require implementation of ver...
Abstract — The rapid deployment of next generation wireless communications systems creates a unique ...
The demonstrated potential of SiGe is reviewed and a performance and cost effective production techn...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
The introduction of optical transmission technology to communication systems during the last years l...
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of>200...
This book equips readers with a thorough understanding of the applicability of new-generation silico...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequenci...
AbstractAtmel describes a new SiGe RF technology which includes three types of npn transistors on on...
story of persistence. The program began with an idea to replace a conventional implantation step, us...
This paper presents an overview of SiGe technologies and their corresponding noise properties both i...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...
This paper presents an overview on the SiGe technology that could be used to design the future commu...
Advances in wireless communications and information processing systems require implementation of ver...
Abstract — The rapid deployment of next generation wireless communications systems creates a unique ...
The demonstrated potential of SiGe is reviewed and a performance and cost effective production techn...
Remarkable developments in bipolar technology over the past decade have seen the silicon germanium h...
The introduction of optical transmission technology to communication systems during the last years l...
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of>200...
This book equips readers with a thorough understanding of the applicability of new-generation silico...
Les transistors bipolaires à hétérojonctions (TBH) Si/SiGe:C disponibles aujourd'hui dans les techno...
In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequenci...
AbstractAtmel describes a new SiGe RF technology which includes three types of npn transistors on on...
story of persistence. The program began with an idea to replace a conventional implantation step, us...
This paper presents an overview of SiGe technologies and their corresponding noise properties both i...
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field eff...
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxid...