Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances
- Regis M.
- Flotats E.
- Borgarino M.
- Kovacic S.
- Lafontaine H.
- Llopis O.
- Tournier E.
- Bary L.
- Plana R.
Publication date
January 2000
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This paper deals with low frequency noise investigation in SiGe BiCMOS devices. We found that five 1/f sources are involved. When appropriate design is done 1/f corner noise frequency lower than 1/kHz has been obtained. These results have been validated through 4 GHz oscillator featuring very low phase noise magnitude
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