Add to ORKGIn this paper we report the first experimental data on hot carrier luminescence in silicon p-channel MOS transistors featuring sub-micron gate length. All the terminal currents of the devices (including the gate and substrate currents) were also measured, and their dependence on the applied bias is analyzed and compared to that of the emitted light intensity
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
Special MOS tunneling structures which, avoiding the obscuring effects of the polysilicon layer, exh...
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by ...
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
This paper presents a detailed study on hot-carrier induced luminescence and degradation of BULK and...
We show how light emission in modern submicrometric semiconductor devices can be used to extract muc...
This paper addresses the problem of hot-carrier degradation and lifetime monitoring in SOI MOSFET's ...
This letter reports direct experimental evidence that the high-energy tail of the hot carrier lumine...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
This paper investigates the use of hot carries luminescence (HCL) measurements as a mean for the ver...
A silicon gated diode, being evolved from MOSFET technology and utilizing a half of MOSFET, has been...
The recent publication of controversial experimental evidence on the origin of hot-carrier currents ...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
Special MOS tunneling structures which, avoiding the obscuring effects of the polysilicon layer, exh...
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by ...
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
This paper presents a detailed study on hot-carrier induced luminescence and degradation of BULK and...
We show how light emission in modern submicrometric semiconductor devices can be used to extract muc...
This paper addresses the problem of hot-carrier degradation and lifetime monitoring in SOI MOSFET's ...
This letter reports direct experimental evidence that the high-energy tail of the hot carrier lumine...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission i...
This paper investigates the use of hot carries luminescence (HCL) measurements as a mean for the ver...
A silicon gated diode, being evolved from MOSFET technology and utilizing a half of MOSFET, has been...
The recent publication of controversial experimental evidence on the origin of hot-carrier currents ...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
Special MOS tunneling structures which, avoiding the obscuring effects of the polysilicon layer, exh...
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by ...