Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
A process is presented based on anodization of silicon in the transition region between the porous s...
Semiconducting materials exhibit electrical conductivity in the region between that of metals and in...
The rise of the communication high-way, the increased speed of computers, the diffusion of multimedi...
The rise of the communication high-way, the increased speed of computers, the diffusion of multimedi...
Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous ...
Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous ...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
72 p.Porous silicon is quickly becoming an increasingly important and versatile electronic material ...
72 p.Porous silicon is quickly becoming an increasingly important and versatile electronic material ...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
In this thesis, a variety of studies about the effect of organic monolayers on the light emitting pr...
The effects of anodization temperature on the photoluminescence (PL) spectrum of porous silicon (Si)...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
A process is presented based on anodization of silicon in the transition region between the porous s...
Semiconducting materials exhibit electrical conductivity in the region between that of metals and in...
The rise of the communication high-way, the increased speed of computers, the diffusion of multimedi...
The rise of the communication high-way, the increased speed of computers, the diffusion of multimedi...
Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous ...
Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous ...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
72 p.Porous silicon is quickly becoming an increasingly important and versatile electronic material ...
72 p.Porous silicon is quickly becoming an increasingly important and versatile electronic material ...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
In this thesis, a variety of studies about the effect of organic monolayers on the light emitting pr...
The effects of anodization temperature on the photoluminescence (PL) spectrum of porous silicon (Si)...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
A process is presented based on anodization of silicon in the transition region between the porous s...
Semiconducting materials exhibit electrical conductivity in the region between that of metals and in...
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