Ever since the first observation of all-optical switching of magnetization in the ferrimagnetic alloy GdFeCo using femtosecond laser pulses, there has been significant interest in exploiting this process for data-recording applications. In particular, the ultrafast speed of the magnetic reversal can enable the writing speeds associated with magnetic memory devices to be potentially pushed towards THz frequencies. This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond...
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using ...
We present a detailed investigation of a novel platform for integration of spintronic memory element...
Imagine being able to write magnetic information efficiently at THz data rates, creating such conten...
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers i...
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers i...
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse t...
International audienceThe switching of a magnetic tunnel junction (MTJ) using femtosecond laser puls...
International audienceBeaurepaire and Bigot when they discovered the ultrafast demagnetization in Ni...
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and...
Since the first experimental observation of all-optical switching phenomena, intensive research has ...
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and...
We experimentally demonstrate single-pulse all-optical switching in Pt/Co/Gd stacks using linearly p...
Recent works have shown that the magnetization of Tb/Co multilayers can be switched all-optically by...
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synt...
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, whic...
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using ...
We present a detailed investigation of a novel platform for integration of spintronic memory element...
Imagine being able to write magnetic information efficiently at THz data rates, creating such conten...
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers i...
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers i...
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse t...
International audienceThe switching of a magnetic tunnel junction (MTJ) using femtosecond laser puls...
International audienceBeaurepaire and Bigot when they discovered the ultrafast demagnetization in Ni...
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and...
Since the first experimental observation of all-optical switching phenomena, intensive research has ...
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and...
We experimentally demonstrate single-pulse all-optical switching in Pt/Co/Gd stacks using linearly p...
Recent works have shown that the magnetization of Tb/Co multilayers can be switched all-optically by...
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synt...
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, whic...
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using ...
We present a detailed investigation of a novel platform for integration of spintronic memory element...
Imagine being able to write magnetic information efficiently at THz data rates, creating such conten...