This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on a die bonder. A range of sintering parameters, reflecting different levels of manufacturability, were used to produce sintered joints in respect of shear strength and porosity, within a process cycle time of a few seconds. The reliability of the sintered attachments were evaluated against Pb5Sn solder joints under constant temperature swing power cycling conditions over the range 50 to 200 °C. The thermal performance and microstructural changes of the sintered joints were monitored and evaluated non-destructively at regular intervals using transient thermal impedance and X-ray computed tomograph...
Nano-particle sintering silver (Ag) paste has recently become a topic of much discussion in commerci...
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate ...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
Nowadays, numerous power electronics application requires operation at high temperatures. In order t...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
© 2014 Copyright © Taylor & Francis Group, LLC. The samples of sintered Ag joints for power die at...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
The samples of sintered Ag joints for power die attachments were prepared using paste of Ag nanopart...
3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been ...
Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bo...
Nano-particle sintering silver (Ag) paste has recently become a topic of much discussion in commerci...
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate ...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
Nowadays, numerous power electronics application requires operation at high temperatures. In order t...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
© 2014 Copyright © Taylor & Francis Group, LLC. The samples of sintered Ag joints for power die at...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
The samples of sintered Ag joints for power die attachments were prepared using paste of Ag nanopart...
3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been ...
Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bo...
Nano-particle sintering silver (Ag) paste has recently become a topic of much discussion in commerci...
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate ...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...