4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides. Nevertheless, as a typical polar material, the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet. In this contribution, nucleation of diamond was performed on the carbon- and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device. The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face. Transmission electron microscopy verifies that there ...
Diamond growth on Si(100) is studied by scanning Auger microscopy (SAM), Auger electron spectroscopy...
We demonstrate the enhancement of diamond nucleation through the use of the equilibrium forces at th...
Diamond crystallites and continuous films were deposited on (100) silicon by microwave plasma assist...
4H-silicon carbides deposited by diamond films have wide applications in many fields such as semicon...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
International audienceDiamond synthesis by microwave plasma assisted chemical vapour deposition (MPC...
The synthesis of thin diamond films using various chemical vapor deposition methods has received sig...
In this paper, we show that silicon dimples are suitable samples to study diamond nucleation on a co...
A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor d...
This paper presents a theoretical study on the initial stage of diamond nucleation during chemical v...
The mechanisms involved in the diamond nucleation on 3C-SiC surfaces have been investigated using a ...
A polycrystalline diamond film grown by hot filament CVD was ion-milled and thinned to the diamond/s...
A polycrystalline diamond film grown by hot filament CVD was ion-milled and thinned to the diamond/s...
Chemical vapor deposition (CVD) has been the main method for synthesizing diamond thin films on hete...
Diamond coatings on porous silicon (PS) samples have been obtained by the hot-filament chemical vapo...
Diamond growth on Si(100) is studied by scanning Auger microscopy (SAM), Auger electron spectroscopy...
We demonstrate the enhancement of diamond nucleation through the use of the equilibrium forces at th...
Diamond crystallites and continuous films were deposited on (100) silicon by microwave plasma assist...
4H-silicon carbides deposited by diamond films have wide applications in many fields such as semicon...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
International audienceDiamond synthesis by microwave plasma assisted chemical vapour deposition (MPC...
The synthesis of thin diamond films using various chemical vapor deposition methods has received sig...
In this paper, we show that silicon dimples are suitable samples to study diamond nucleation on a co...
A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor d...
This paper presents a theoretical study on the initial stage of diamond nucleation during chemical v...
The mechanisms involved in the diamond nucleation on 3C-SiC surfaces have been investigated using a ...
A polycrystalline diamond film grown by hot filament CVD was ion-milled and thinned to the diamond/s...
A polycrystalline diamond film grown by hot filament CVD was ion-milled and thinned to the diamond/s...
Chemical vapor deposition (CVD) has been the main method for synthesizing diamond thin films on hete...
Diamond coatings on porous silicon (PS) samples have been obtained by the hot-filament chemical vapo...
Diamond growth on Si(100) is studied by scanning Auger microscopy (SAM), Auger electron spectroscopy...
We demonstrate the enhancement of diamond nucleation through the use of the equilibrium forces at th...
Diamond crystallites and continuous films were deposited on (100) silicon by microwave plasma assist...