Add to ORKGThe analysis of the internal stress in deposited aluminum layers is demonstrated and dependences of the internal stresses on the thickness of the aluminum films deposited at various substrate temperatures and evaporation rates are studied. The study may be applied to fabricate the nanoporous alumina coatings for different kinds of high-sensitive sensors
When grown films by atomic layer deposition (ALD) both intrinsic and thermal stresses are formed int...
High residual stress in thin films cause problem for wafer processing and measurements which assume ...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
The internal stresses of the aluminum films deposited at various substrate temperatures and evaporat...
Here we present our study of the stress dependence in Al thin films on deposition conditions. We con...
This paper is focused on the study of internal stress in thick films used in hybrid microelectronics...
Here we present our study of the stress dependence in Al thin films on deposition conditions. We con...
Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimizati...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Internal friction in aluminum thin films on silicon substrates has been measured between 180 and 360...
Strains and stresses in aluminum thin films and patterned lines were measured using x-ray diffractio...
Stresses in passivated and unpassivated Al films with different thicknesses have been measured with ...
The residual stresses build up in cold spray deposition represent a key parameter to develop compact...
Aluminum thin films have been investigated in an effort to relate measurable resistive and observabl...
When grown films by atomic layer deposition (ALD) both intrinsic and thermal stresses are formed int...
High residual stress in thin films cause problem for wafer processing and measurements which assume ...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
The internal stresses of the aluminum films deposited at various substrate temperatures and evaporat...
Here we present our study of the stress dependence in Al thin films on deposition conditions. We con...
This paper is focused on the study of internal stress in thick films used in hybrid microelectronics...
Here we present our study of the stress dependence in Al thin films on deposition conditions. We con...
Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimizati...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Internal friction in aluminum thin films on silicon substrates has been measured between 180 and 360...
Strains and stresses in aluminum thin films and patterned lines were measured using x-ray diffractio...
Stresses in passivated and unpassivated Al films with different thicknesses have been measured with ...
The residual stresses build up in cold spray deposition represent a key parameter to develop compact...
Aluminum thin films have been investigated in an effort to relate measurable resistive and observabl...
When grown films by atomic layer deposition (ALD) both intrinsic and thermal stresses are formed int...
High residual stress in thin films cause problem for wafer processing and measurements which assume ...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...