Add to ORKGWe present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistor...
The temperature dependence of Hall and magnetoresistance eects in n-type Si having a resistivity of ...
Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact ...
We present the results on low temperature current-voltage characteristics of noncompensated Si doped...
We report on the electric transport properties of Si heavily doped with Sb in the temperature range ...
The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, ...
We investigate the transport properties of -type noncompensated silicon below the insulator-metal tr...
We investigate the transport properties of n-type noncompensated silicon below the insulator-metal t...
Temperature and magnetic field dependencies of resistivity π in Si-MOSFET with n-channel have been i...
We report on the electric transport properties of Si heavily doped with Sb at concentration just bel...
The temperature dependence of the kinetic electronic characteristics (conductivity, magnetoresistanc...
Consideration has been made of bulk differential negative resistance as a low temperature property o...
Studies of the electrical properties of Si single crystals with delta (Sb) layers of various sheet d...
The forward current-voltage (I-V) characteristics of the n+-p silicon diodes, B-doped with impurity ...
Investigation of electrical resistivity and magnetoresistance in single crystalline n-type silicon h...
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistor...
The temperature dependence of Hall and magnetoresistance eects in n-type Si having a resistivity of ...
Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact ...
We present the results on low temperature current-voltage characteristics of noncompensated Si doped...
We report on the electric transport properties of Si heavily doped with Sb in the temperature range ...
The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, ...
We investigate the transport properties of -type noncompensated silicon below the insulator-metal tr...
We investigate the transport properties of n-type noncompensated silicon below the insulator-metal t...
Temperature and magnetic field dependencies of resistivity π in Si-MOSFET with n-channel have been i...
We report on the electric transport properties of Si heavily doped with Sb at concentration just bel...
The temperature dependence of the kinetic electronic characteristics (conductivity, magnetoresistanc...
Consideration has been made of bulk differential negative resistance as a low temperature property o...
Studies of the electrical properties of Si single crystals with delta (Sb) layers of various sheet d...
The forward current-voltage (I-V) characteristics of the n+-p silicon diodes, B-doped with impurity ...
Investigation of electrical resistivity and magnetoresistance in single crystalline n-type silicon h...
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistor...
The temperature dependence of Hall and magnetoresistance eects in n-type Si having a resistivity of ...
Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact ...