Brush Plated Copper Gallium Sulphide Films and their Properties

Copper gallium sulphide films were deposited for the first time by the brush plating technique at different electrolyte temperatures in the range of 30°C - 80°C and at a constant deposition current density of 5.0 mA cm-2. X-ray diffractograms of the films are single phase with chalcopyrite structure. EDAX measurements indicated that the Cu/Ga ratio decreased from 1.29 to 1.00 as the electrolyte temperature increased from 30°C - 80°C. The grain size increased with increase of electrolyte temperature. The grain size increases from 100 nm to 300 nm as the electrolyte temperature increases