Synthesis and Study of Annealing Effect on Electrical Properties of CdS doped Zn Thin Films

CdS doped Zn thin films have been prepared by thermal evaporation technique on glass substrate at room temperature under high vacuum of 10-5 mbar. These films have been annealed at different annealing temperatures (373,423,473 and 523) K. X-ray diffraction studies show that the structure is nearly crystalline with preferential orientation along the (111) direction of the cubic structure type. Results showed that the D.C. conductivity increases with increasing of temperature while it decreases with increasing of annealing temperatures. The activation energies increased with increasing of annealing temperatures. Hall measurements showed that all doped films are n-type. The charge carriers concentration decreases with increasing of annealing temperatures. Hall mobility, drift velocity, carrier life-time and mean free path increases with increasing of annealing temperatures