Electronic properties of transferable atomically thin MoSe2/h-BN heterostructures grown on Rh(111)

Vertically stacked two-dimensional (2D) heterostructures composed of 2D semiconductors have attracted great attention. Most of these include hexagonal boron nitride (h-BN) as either a substrate, an encapsulant, or a tunnel barrier. However, reliable synthesis of large-area and epitaxial 2D heterostructures incorporating BN remains challenging. Here, we demonstrate the epitaxial growth of nominal monolayer (ML) MoSe2 on h-BN/Rh(111) by molecular beam epitaxy, where the MoSe2/h-BN layer system can be transferred from the growth substrate onto SiO2. The valence band structure of ML MoSe2/h-BN/Rh(111) revealed by photoemission electron momentum microscopy (kPEEM) shows that the valence band maximum located at the K point is 1.33 eV below the Fermi level (EF), whereas the energy difference between K and Γ points is determined to be 0.23 eV, demonstrating that the electronic properties, such as the direct band gap and the effective mass of ML MoSe2, are well preserved in MoSe2/h-BN heterostructures.The access was provided by the NFFA-Europe Infrastructure (proposal ID 121) under Horizon 2020 EU Funding Program. We thank N. Gambacorti for coordinating the access to the NFFA-EU program. This work was financially supported by the European Research Council (Grant No. 240076) and has received funding from the European Union’s Horizon 2020 research and innovation programme under Grant Agreement Nos. 696656 and 785219 (Graphene Flagship Core 1 and Core 2). M.P. acknowledges support by the Swiss National Science Foundation (Grant No. 200021-162612).Peer reviewe