This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...
Effect of mobility variation (Δμ<sub>eff</sub>) during NBTI stress is well documented for ...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Aggressive device scaling has made it imperative to account for process variations in the design flo...
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simul...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical Vt variations lead to large variations of leakage current, which cause statistical volta...
© 1993-2012 IEEE. Advanced scaling and the introduction of new materials in the metal-oxide-semicond...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Ce travail porte sur la caractérisation et la modélisation des fluctuations aléatoires des paramètre...
Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach....
A general statistical model to describe the generation of statistically independent defects in gate...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...
Effect of mobility variation (Δμ<sub>eff</sub>) during NBTI stress is well documented for ...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Aggressive device scaling has made it imperative to account for process variations in the design flo...
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simul...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical Vt variations lead to large variations of leakage current, which cause statistical volta...
© 1993-2012 IEEE. Advanced scaling and the introduction of new materials in the metal-oxide-semicond...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Ce travail porte sur la caractérisation et la modélisation des fluctuations aléatoires des paramètre...
Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach....
A general statistical model to describe the generation of statistically independent defects in gate...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...
Effect of mobility variation (Δμ<sub>eff</sub>) during NBTI stress is well documented for ...