This work proposes an SRAM array with built-in real-time error detection (RTD) capabilities. Each cell in the new RTD-SRAM array computes its part of the real-time parity of an SRAM array column on-the-fly. RTD based arrays detect a fault right away after it occurs, rather than when it is read. RTD, therefore, breaks the serialization between data access and error detection and, thus, it can speed-up the access-time of arrays that use on-the-fly error detection and correction. The paper presents an analysis and optimization of an RTD-SRAM and its application to a tag array. Compared to a state-of-the-art tag array protection, the evaluated scheme has comparable error detection and correction strength and, depending on the array dimensions, ...
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using t...
Embedded SRAM bit count is constantly growing limiting yield in systems-on-chip (SoCs). As technolog...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
This work proposes in-situ Real-Time Error Detection (RTD): embedding hardware in a memory array for...
Cache memories are very relevant components in modern processors, and therefore, their protection ag...
DoctorReliability of a memory subsystem is one of the most important feature to computer system stab...
As emerging memories are utilized in processors as main memory, they must also coexist with CMOS mem...
This paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset...
Geometry scaling due to technology evolution as well as Vcc scaling lead to failures in large SRAM a...
<p>Reliability is of the utmost importance for safety of electronic systems built for the automotive...
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using t...
International audienceLimited endurance of resistive RAM (RRAM) is a major challenge for future comp...
The reliability of memory subsystem is fast becoming a concern in computer architecture and system d...
Conventional set-associative data cache accesses waste energy since tag and data arrays of several w...
In this paper, we present a hardware technique, called Self-Repairing Array Structures (SRAS), for m...
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using t...
Embedded SRAM bit count is constantly growing limiting yield in systems-on-chip (SoCs). As technolog...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
This work proposes in-situ Real-Time Error Detection (RTD): embedding hardware in a memory array for...
Cache memories are very relevant components in modern processors, and therefore, their protection ag...
DoctorReliability of a memory subsystem is one of the most important feature to computer system stab...
As emerging memories are utilized in processors as main memory, they must also coexist with CMOS mem...
This paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset...
Geometry scaling due to technology evolution as well as Vcc scaling lead to failures in large SRAM a...
<p>Reliability is of the utmost importance for safety of electronic systems built for the automotive...
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using t...
International audienceLimited endurance of resistive RAM (RRAM) is a major challenge for future comp...
The reliability of memory subsystem is fast becoming a concern in computer architecture and system d...
Conventional set-associative data cache accesses waste energy since tag and data arrays of several w...
In this paper, we present a hardware technique, called Self-Repairing Array Structures (SRAS), for m...
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using t...
Embedded SRAM bit count is constantly growing limiting yield in systems-on-chip (SoCs). As technolog...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...