Random phenomena are ubiquitous in magnetism. They include, for example: the random orientation of magnetization in an assembly of non-interacting isotropic magnets; arbitrary maze domain patterns in magnetic multilayers with out-of-plane anisotropy, random polarization, and chirality of an array of magnetic vortices; or Brownian skyrmion motion, among others. Usually, for memory applications, randomness needs to be avoided to reduce noise and enhance stability and endurance. However, these uncontrolled magnetic effects, especially when incorporated in magnetic random-access memories, offer a wide range of new opportunities in, e.g., stochastic computing, the generation of true random numbers, or physical unclonable functions for data secur...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...
Stochastic behaviour fundamentally limits the performance and reliability of nanomagnetic devices. T...
textIn this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM...
International audienceMagnetic domain-walls travelling through a magnetic circuit 1 perform naturall...
Stochasticity in magnetic nanodevices is an essential characteristic for harnessing these devices to...
Random number generation can be based on physical events with probabilistic character, or on algorit...
Probabilistic computing has been proposed as an attractive alternative for bridging the computationa...
Low-barrier nanomagnets have attracted a great deal of research interest for their use as sources of...
With the widespread use of mobile computing and internet of things, secured communication and chip a...
With the advancement of fabrication processes, single domain nanomagnets devices are being exploited...
With the advancement of fabrication processes, bistable single domain nanomagnets are being exploite...
Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed for use in ran...
International audienceWith the advancement of fabrication processes, bistable single domain nanomagn...
Stochastic behavior fundamentally limits the performance and reliability of nanomagnetic devices. Ty...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...
Stochastic behaviour fundamentally limits the performance and reliability of nanomagnetic devices. T...
textIn this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM...
International audienceMagnetic domain-walls travelling through a magnetic circuit 1 perform naturall...
Stochasticity in magnetic nanodevices is an essential characteristic for harnessing these devices to...
Random number generation can be based on physical events with probabilistic character, or on algorit...
Probabilistic computing has been proposed as an attractive alternative for bridging the computationa...
Low-barrier nanomagnets have attracted a great deal of research interest for their use as sources of...
With the widespread use of mobile computing and internet of things, secured communication and chip a...
With the advancement of fabrication processes, single domain nanomagnets devices are being exploited...
With the advancement of fabrication processes, bistable single domain nanomagnets are being exploite...
Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed for use in ran...
International audienceWith the advancement of fabrication processes, bistable single domain nanomagn...
Stochastic behavior fundamentally limits the performance and reliability of nanomagnetic devices. Ty...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...
Stochastic behaviour fundamentally limits the performance and reliability of nanomagnetic devices. T...
textIn this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM...