Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic cell to store sensitive data, which could solve this bothersome problem. This cell has three states: ‘1’, ‘0’, and masked. When the system is powered off or the data is not used, the cell is set to the masked state, where the cell still stores a ‘1’ or a ‘0’ but a malicious adversary is not capable of extracting the stored value using reverse engineering techniques. Before reading, the cell needs to be unmasked and it is masked afterwards until the next reading request. The operation of the cell also provides robustness ...
We study the security feature of static random access memory (SRAM) against the data imprinting atta...
Due to their high-density and near-zero leakage power consumption, non-volatile memories (NVMs) are ...
The security of data information is the most concemmg parameter for memory devices design contempor...
Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useles...
In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredi...
To enhance the system integrity of FPGA-based embedded systems on hardware design, we propose a hard...
In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access mem...
Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memo...
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM)...
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
The last decade has recorded an increase in security protocols for integrated circuits and memory sy...
International audienceOn-chip memories, and in particular SRAMs, are among the most critical compone...
The unprecedented demand for performance in the latest technologies will ultimately require changes ...
Static Random-Access Memory (SRAM) has been widely applied in electronic devices to generate and sto...
Memory systems security has increased over the last decade due to the sensitive information which is...
We study the security feature of static random access memory (SRAM) against the data imprinting atta...
Due to their high-density and near-zero leakage power consumption, non-volatile memories (NVMs) are ...
The security of data information is the most concemmg parameter for memory devices design contempor...
Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useles...
In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredi...
To enhance the system integrity of FPGA-based embedded systems on hardware design, we propose a hard...
In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access mem...
Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memo...
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM)...
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
The last decade has recorded an increase in security protocols for integrated circuits and memory sy...
International audienceOn-chip memories, and in particular SRAMs, are among the most critical compone...
The unprecedented demand for performance in the latest technologies will ultimately require changes ...
Static Random-Access Memory (SRAM) has been widely applied in electronic devices to generate and sto...
Memory systems security has increased over the last decade due to the sensitive information which is...
We study the security feature of static random access memory (SRAM) against the data imprinting atta...
Due to their high-density and near-zero leakage power consumption, non-volatile memories (NVMs) are ...
The security of data information is the most concemmg parameter for memory devices design contempor...