An exponentially fitted box method, known as the Scharfetter-Gummel box method, for the semiconductor device équations in the Slotboom variables is analysed. The method is formulated as a Petrov-Galerkin finite element method with piecewise exponential basis functions on a triangular Delaunay mesh. No restriction is imposed on the angles in the triangulation, The stability of the method is proved and an error estimate for the Slotboom variables in a discrete energy norm is given. When restricted to the two continuity équations the error estimate dépends only on the first-order seminorm of the exact flux and the approximation error ofthe zero order and inhomogeneous terms. This is in contrast to standard error estimâtes which depend ...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
The van Roosbroeck system describes the semi-classical transport of free electrons and holes in a se...
The paper demonstrates a finite-element method(FEM) simulation model of semiconductor devices operat...
In this paper we present a novel exponentially fitted finite element method with triangular elements...
For a linear potential function one-dimensional constant current drift-diffusion equations can be in...
summary:In part I of the paper (see Zlámal [13]) finite element solutions of the nonstationary semi...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.A finite difference approximat...
The ability to model the steady-state field inside active structures, such as a transistor, is an i...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
AbstractA class of methods recently developed by Brezzi for the solution of semiconductor device equ...
The fundamental transient semiconductor device equations are scaled appropriately such that a singul...
Abstract: The basic mathematical results on the elliptic boundary value problem which corresponds to...
Since the 1950s, semiconductors have played a significant and daily role in our lives, as they are t...
International audienceThe aim of this work is to study the large-time behavior of the Scharfetter– G...
This article outlines a method for stabilising the current continuity equations which are used for s...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
The van Roosbroeck system describes the semi-classical transport of free electrons and holes in a se...
The paper demonstrates a finite-element method(FEM) simulation model of semiconductor devices operat...
In this paper we present a novel exponentially fitted finite element method with triangular elements...
For a linear potential function one-dimensional constant current drift-diffusion equations can be in...
summary:In part I of the paper (see Zlámal [13]) finite element solutions of the nonstationary semi...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.A finite difference approximat...
The ability to model the steady-state field inside active structures, such as a transistor, is an i...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
AbstractA class of methods recently developed by Brezzi for the solution of semiconductor device equ...
The fundamental transient semiconductor device equations are scaled appropriately such that a singul...
Abstract: The basic mathematical results on the elliptic boundary value problem which corresponds to...
Since the 1950s, semiconductors have played a significant and daily role in our lives, as they are t...
International audienceThe aim of this work is to study the large-time behavior of the Scharfetter– G...
This article outlines a method for stabilising the current continuity equations which are used for s...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
The van Roosbroeck system describes the semi-classical transport of free electrons and holes in a se...
The paper demonstrates a finite-element method(FEM) simulation model of semiconductor devices operat...