Nanocrystalline magnetite (Fe3O4) films with various preferred crystallite orientations were grown on oxidized silicon surface by reactive iron deposition in an oxygen atmosphere. Depending on the partial pressure of oxygen (PO2), the evolution of the structural, magnetic, and magnetotransport properties of the grown films was investigated. We found that the growth of films containing only the Fe3O4 phase occurs in a certain PO2 range, and the magnetite crystallites may have (311) or (110) preferred orientation. It was revealed that films with (311) and (110) textures have a column structure. An increase in the PO2 leads to a structure transformation from (311) to (110) texture with larger crystallites. A film with (110) texture showed high...
In this work we analyze the role of the SiO2 layer in the functionality of Fe3O4/SiO2/Si heterostruc...
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates...
Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at differ...
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.The structural, ma...
Fe3O4 is a promising candidate for spintronics. As an inert oxygen supplier, YSZ (Yttria Stabilized ...
Magnetic oxides have become of interest source for spin transport devices due to their high spin pol...
This work describes the synthesis of high quality of epitaxial Fe3O4 ultrathin films and characteriz...
We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from C...
Currently, there is an enormous need for flexible electronic devices given their astonishing compete...
Magnetite (Fe3O4) is of both scientific and technological interest because of its fascinating magnet...
Iron oxide films were reactively grown on iron buffer films, which were deposited before on MgO(001)...
Polycrystalline Fe3O4 films have been prepared by reactive sputtering at room temperature, which is ...
Nanocrystalline magnetite Fe3O4 films of about 180 nm thick have been deposited on Si~100! substrate...
The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxi...
We report the magnetotransport properties of a 40 nm-thick Fe3O4 thin film grown on a MgO (0 0 1) su...
In this work we analyze the role of the SiO2 layer in the functionality of Fe3O4/SiO2/Si heterostruc...
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates...
Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at differ...
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.The structural, ma...
Fe3O4 is a promising candidate for spintronics. As an inert oxygen supplier, YSZ (Yttria Stabilized ...
Magnetic oxides have become of interest source for spin transport devices due to their high spin pol...
This work describes the synthesis of high quality of epitaxial Fe3O4 ultrathin films and characteriz...
We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from C...
Currently, there is an enormous need for flexible electronic devices given their astonishing compete...
Magnetite (Fe3O4) is of both scientific and technological interest because of its fascinating magnet...
Iron oxide films were reactively grown on iron buffer films, which were deposited before on MgO(001)...
Polycrystalline Fe3O4 films have been prepared by reactive sputtering at room temperature, which is ...
Nanocrystalline magnetite Fe3O4 films of about 180 nm thick have been deposited on Si~100! substrate...
The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxi...
We report the magnetotransport properties of a 40 nm-thick Fe3O4 thin film grown on a MgO (0 0 1) su...
In this work we analyze the role of the SiO2 layer in the functionality of Fe3O4/SiO2/Si heterostruc...
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates...
Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at differ...