The authors report on the systematic variation of the onset of lasing in high-β photonic crystal nanolasers. A series of nanocavities has been designed to systematically approach the high-β devices by controlling the number of modes in the s-shell spectrum of InAs quantum dots at 4K. The lasing action is confirmed by the observation of coherent-state transition to Poissonian photon statistics. The quantitative analysis reveals the high β of 0.69, 0.44, and 0.19 for the nanocavities with one, two, and three modes, respectively. By mapping the observed lasing transitions to β factors, the authors demonstrate the interplay of β and lasing performance
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
The ongoing miniaturization of semiconductor lasers has enabled ultra‐low threshold devices and even...
The paper reports on the first experimental demonstration of low-threshold lasing in photonic nanoca...
The paper reports on the first experimental demonstration of low-threshold lasing in photonic nanoca...
We demonstrate that very few (2–4) quantum dots as a gain medium are sufficient to realize a photoni...
We report on the higher-order photon correlations of a high-β nanolaser under pulsed excitation at r...
In the realization of ultrasmall semiconductor lasers, cavity-QED effects are used to enhance sponta...
We have demonstrated high spontaneous emission coupling factor ~ 0.1 from photonic crystal nanolaser...
We have demonstrated high spontaneous emission coupling factor ~ 0.1 from photonic crystal nanolaser...
The pursuit for ideal integrated light sources that promise compact footprints, fast modulation and ...
The pursuit for ideal integrated light sources that promise compact footprints, fast modulation and ...
UnrestrictedBasic concepts on photonic microcavity and nanocavity devices with quantum dot active ma...
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the de...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
The ongoing miniaturization of semiconductor lasers has enabled ultra‐low threshold devices and even...
The paper reports on the first experimental demonstration of low-threshold lasing in photonic nanoca...
The paper reports on the first experimental demonstration of low-threshold lasing in photonic nanoca...
We demonstrate that very few (2–4) quantum dots as a gain medium are sufficient to realize a photoni...
We report on the higher-order photon correlations of a high-β nanolaser under pulsed excitation at r...
In the realization of ultrasmall semiconductor lasers, cavity-QED effects are used to enhance sponta...
We have demonstrated high spontaneous emission coupling factor ~ 0.1 from photonic crystal nanolaser...
We have demonstrated high spontaneous emission coupling factor ~ 0.1 from photonic crystal nanolaser...
The pursuit for ideal integrated light sources that promise compact footprints, fast modulation and ...
The pursuit for ideal integrated light sources that promise compact footprints, fast modulation and ...
UnrestrictedBasic concepts on photonic microcavity and nanocavity devices with quantum dot active ma...
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the de...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
We show coupling between single 1.3 µm InAs quantum dots (QDs) and photonic crystal nanocavities wit...
The ongoing miniaturization of semiconductor lasers has enabled ultra‐low threshold devices and even...