The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide using optical emission analysis of plasma in the target region to determine the optimal conditions for the formation of intrinsic GaAs oxides. The ion source was a plasmatron based on an anode layer accelerator (UAS), which generated a stream of accelerated argon and oxygen ions with an energy of 400–1200 eV. The target was made from tellurium doped gallium arsenide. Intense GaI lines (2874.2 Å, 2943.6 Å, 4033.0 Å and 4172.1 Å), atomic argon ArI, argon ions, and also FeI lines were detected in the spectrum upon sputtering of GaAs by Ar+ ions. The appearance of iron lines can be explained by the sputtering of the pole tips of the magnetic system...
This report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The para...
The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in si...
grantor: University of TorontoThis study introduces a novel method for surface passivation...
The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It wa...
International audienceResults from molecular dynamics (MD) simulations of low-energy (50–200 eV) Ar+...
A surface characterization has been performed on n-type GaAs (Si: GaAs) samples by using x-ray photo...
Sputtering yields have been measured for neon, argon and krypton sputtering of gold and for argon an...
The study of material sputtering under low-pressure reactive ion etching conditions in various gases...
International audienceA GaN laser diode at 403.3 nm is used to measure the velocity distribution fun...
104 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.GaAs films were grown on (100...
Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by...
Semiconductor nanostructures formed by a surface modification process caused by ion sputtering is st...
Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam ...
The reactive ion etch (RIE) process, and its applications in gallium arsenic (GaAs) device fabricati...
Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by...
This report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The para...
The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in si...
grantor: University of TorontoThis study introduces a novel method for surface passivation...
The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It wa...
International audienceResults from molecular dynamics (MD) simulations of low-energy (50–200 eV) Ar+...
A surface characterization has been performed on n-type GaAs (Si: GaAs) samples by using x-ray photo...
Sputtering yields have been measured for neon, argon and krypton sputtering of gold and for argon an...
The study of material sputtering under low-pressure reactive ion etching conditions in various gases...
International audienceA GaN laser diode at 403.3 nm is used to measure the velocity distribution fun...
104 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.GaAs films were grown on (100...
Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by...
Semiconductor nanostructures formed by a surface modification process caused by ion sputtering is st...
Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam ...
The reactive ion etch (RIE) process, and its applications in gallium arsenic (GaAs) device fabricati...
Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by...
This report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The para...
The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in si...
grantor: University of TorontoThis study introduces a novel method for surface passivation...