Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Funding Information: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Funding Information: Acknowledgments: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Publisher Copyright: © 2021 by the author. Licensee MDPI, Basel, Switzerland.Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.Peer reviewe