An environmentally friendlier solution processing has been introduced to fabricate zirconium oxide (ZrO2) films on quartz substrates, using spin coating of simple water-based solution. The films cured with UV-A = 330 nm for different times (40, 80, 120 min) were investigated for structural and optical properties and compared with thermally annealed film (at 350 °C). XRD and Raman spectroscopy showed amorphous structure in all the samples with no significant phase transformation with UV-A exposure. AFM microscopy showed smooth and crack free films with surface roughness ≤2 nm that reduced with UV-A exposure. Ultraviolet-visible (UV–Vis) spectroscopy demonstrated optical transmittance ≥88% and energy band gap variations as 4.52–4.70 eV. Optic...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersion...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
This paper demonstrates the high yield and cost effectiveness of a simple and ecofriendly water-base...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit ZrO2 thin films on p...
An inorganic aqueous precursor for the deposition of ZrO2 thin films via spincoating\ud was develope...
Zirconium oxide thin films loaded with 10, 30 and 50 mol% lanthanide ions (Er or Eu) have been succe...
Zirconium oxide layers exhibiting excellent electrical properties have been prepared by photo-assist...
Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersion...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Abstract: This communication presents waveguide Raman spectra of ZrO2 thin films. The evolution of s...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersion...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
This paper demonstrates the high yield and cost effectiveness of a simple and ecofriendly water-base...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
We describe the preparation and characterization of zirconia (ZrO2) thin films via sol–gel route by ...
A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit ZrO2 thin films on p...
An inorganic aqueous precursor for the deposition of ZrO2 thin films via spincoating\ud was develope...
Zirconium oxide thin films loaded with 10, 30 and 50 mol% lanthanide ions (Er or Eu) have been succe...
Zirconium oxide layers exhibiting excellent electrical properties have been prepared by photo-assist...
Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersion...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Abstract: This communication presents waveguide Raman spectra of ZrO2 thin films. The evolution of s...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
Thin ZrO2 films were produced at 323 K by the deposition of colloids from stable, aqueous dispersion...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...