Modelling of GaN high electron mobility transistor on diamond substrate

Abstract A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour of the intrinsic transistor. The frequency independence of the intrinsic elements at active multibias condition has been considered as another objective in addition to measurements' fitting. Physical relevant values for the model elements have been obtained. The model accuracy was also validated by means of S‐parameters simulation, which showed a very good fitting of the measured data