This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches. It uses a modulation strategy that produces a cluster of low frequency switches commutating at fundamental line frequency (realized with Si IGBTs) and high frequency switches commutating at carrier frequency (realized with hybrid Si/SiC switches) to facilitate a tradeoff between the inverter efficiency and cost. A generalized Si/SiC current rating ratio optimization algorithm is presented for the hybrid Si/SiC switches based on the power loss profile of ANPC inverter. This algorithm determines the optimal current rating ratio b...
Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable en...
The high frequency operation of the WBG devices such as SiC emphasizes the effect of parasitics, gen...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, are becoming increasingly popul...
The ability to improve both the size and efficiency of multilevel single-phase converters is a key t...
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFE...
Wideband-gap (WBG) power devices such as silicon carbide (SiC) switches have become increasingly pop...
In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, whic...
This dissertation work presents two novel converter topologies (a three-level ANPC inverter utilizin...
Abstract: Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors...
This paper proposes a hybrid modulation strategy for a medium-voltage hybrid seven-level (7-L) conve...
Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electric...
In this paper the power losses of the 3-level-topology [ldquo ]Mixed Voltage Neutral Point Clamped (...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Several efforts have been put in the reduction of the power losses of DC-AC converters by investigat...
Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable en...
The high frequency operation of the WBG devices such as SiC emphasizes the effect of parasitics, gen...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, are becoming increasingly popul...
The ability to improve both the size and efficiency of multilevel single-phase converters is a key t...
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFE...
Wideband-gap (WBG) power devices such as silicon carbide (SiC) switches have become increasingly pop...
In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, whic...
This dissertation work presents two novel converter topologies (a three-level ANPC inverter utilizin...
Abstract: Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors...
This paper proposes a hybrid modulation strategy for a medium-voltage hybrid seven-level (7-L) conve...
Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electric...
In this paper the power losses of the 3-level-topology [ldquo ]Mixed Voltage Neutral Point Clamped (...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Several efforts have been put in the reduction of the power losses of DC-AC converters by investigat...
Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable en...
The high frequency operation of the WBG devices such as SiC emphasizes the effect of parasitics, gen...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, are becoming increasingly popul...