The growth of silicon on various nitride coated quartz substrates were studied using in-situ observation of the solidification process. Three different coating types were used: One consisting entirely of α-Si3N4 particles, one of only β-Si3N4 particles, and a third of a 50/50 mixture of the above mentioned coating powders. The mean particle size of the α- and β-particles was about 0.3 μm and 5.7 μm, respectively. Three different cooling rates were used for each coating type: 2, 5 and 10 K/min. It was observed that the samples were similar at the lowest cooling rate, but at 5 K/min and higher the samples differed significantly. The biggest difference was seen in the α-particle coating, which showed significant dendritic growth, compared to t...
A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(1...
High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resis...
The grain structure of high-performance (HP) multicrystalline silicon (mc-Si) is characterized by a ...
International audienceThe heterogeneous nucleation of solid silicon is studied when molten droplets ...
The silicon material for photovoltaic (PV) industry demands high quality. It is known that dislocati...
The growth of Si and Ge on silicon nitride surfaces has been investigated using scanning tunneling m...
β-Si3N4 particles are thought to be nucleation sites for silicon in multicrystalline silicon (mc-Si)...
Silicon nitride is commonly used as a coating material for the silica crucibles utilized for the gro...
We investigated the relationship between the formation of small grains and distribution of precipita...
A fundamental study of the grain growth anisotropy of silicon nitride in liquids has been conducted ...
A dual ion beam system is used to produce hard nanocomposite TiN/Si3N4 coatings on Si. Cross-section...
In this paper we present first results of crystallization experiments on the interaction between the...
Previous studies have investigated the effect of the oxide layer (Ovregård 2013) and iron content (H...
International audienceAtom probe tomography (APT) was employed to investigate the precipitation proc...
Directional solidification by the Vertical Gradient Freeze method (VGF) and related technologies is ...
A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(1...
High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resis...
The grain structure of high-performance (HP) multicrystalline silicon (mc-Si) is characterized by a ...
International audienceThe heterogeneous nucleation of solid silicon is studied when molten droplets ...
The silicon material for photovoltaic (PV) industry demands high quality. It is known that dislocati...
The growth of Si and Ge on silicon nitride surfaces has been investigated using scanning tunneling m...
β-Si3N4 particles are thought to be nucleation sites for silicon in multicrystalline silicon (mc-Si)...
Silicon nitride is commonly used as a coating material for the silica crucibles utilized for the gro...
We investigated the relationship between the formation of small grains and distribution of precipita...
A fundamental study of the grain growth anisotropy of silicon nitride in liquids has been conducted ...
A dual ion beam system is used to produce hard nanocomposite TiN/Si3N4 coatings on Si. Cross-section...
In this paper we present first results of crystallization experiments on the interaction between the...
Previous studies have investigated the effect of the oxide layer (Ovregård 2013) and iron content (H...
International audienceAtom probe tomography (APT) was employed to investigate the precipitation proc...
Directional solidification by the Vertical Gradient Freeze method (VGF) and related technologies is ...
A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(1...
High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resis...
The grain structure of high-performance (HP) multicrystalline silicon (mc-Si) is characterized by a ...