During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, most important is the fact that the program has been made capable of running with band structures and scattering rates calculated by the k*p-method, leaving the less accurate analytical approximations behind. The program is now capable of running bulk Monte Carlo simulations using a full-band model for the valence bands. All important infrastructure is also set up for adding full-band versions of other bands
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We discuss the application of the fullband cellular automaton (CA) method for the simulation of char...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
We briefly review the hot-electron effects which have necessitated the development of accurate solut...
A set of programs for calculating carrier-phonon and carrier-alloy scat-tering rates have been const...
ii In semiconductor physics, many properties or phenomena of materials can be brought to light throu...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
Electron transport properties of bulk GaN are presented based on full band ensemble Monte Carlo tech...
The Monte Carlo (MC) technique has been frequently used to model semiconductor thin-film epitaxy, es...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
In a previous article [J. Appl. Phys. 92, 5359 (2002)], we presented a combination of a full-band Mo...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We discuss the application of the fullband cellular automaton (CA) method for the simulation of char...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
We briefly review the hot-electron effects which have necessitated the development of accurate solut...
A set of programs for calculating carrier-phonon and carrier-alloy scat-tering rates have been const...
ii In semiconductor physics, many properties or phenomena of materials can be brought to light throu...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
Electron transport properties of bulk GaN are presented based on full band ensemble Monte Carlo tech...
The Monte Carlo (MC) technique has been frequently used to model semiconductor thin-film epitaxy, es...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
In a previous article [J. Appl. Phys. 92, 5359 (2002)], we presented a combination of a full-band Mo...
We present a rigorous model for the overall band structure calculation using theperturbative k.p app...
We discuss the application of the fullband cellular automaton (CA) method for the simulation of char...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...