This Master's thesis is a continuation of the specialization project I did during the spring of 2011. The goal of said project was to set up a system for UV-photoluminescence experiments in the Nanophotonics laboratory at the Department of Electronics and Telecommunications at NTNU, and conduct photoluminescence spectroscopy measurements on different zinc oxide nanostructures, including GaAs/AlGaAs/ZnO core/multishell nanowires. This thesis involves studying zinc oxide nanowires using both a continuous wave and pulsed ultraviolet laser light, and the final goal is to optically excite these nanowires so they achieve lasing. Using a Tsunami Ti:sapph mode-locked tunable laser and a flexible harmonic generator, laser pulses with a pulse duratio...
Room-temperature ultraviolet lasing in [0001] oriented zinc oxide nanorods grown on silicon and fuse...
157 p.As a functional oxide material, zinc oxide (ZnO) has substantial research importance for its s...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...
Ultraviolet lasing from single zinc oxide nanowires is demonstrated at room temperature. Near-field ...
Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method bas...
This paper reviews several topics related to optically pumped ZnO nanowire lasers. A systematic stud...
[[abstract]]Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrat...
Zinc oxide, with its direct wide bandgap and high exciton binding energy, is a promising material fo...
The topic of this dissertation is embedded into the new-born field of inorganic nanowires. The resea...
Nanotechnology has attracted huge interest in many fields such as optics, electronics, as well as bi...
Scanning near-field optical microscope (SNOM) was employed to investigate the room temperature photo...
Nanotechnology has attracted huge interest in many fields such as optics, electronics, as well as bi...
Over the past few years, a little word with big potential has been rapidly entering into the world's...
The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemic...
Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric const...
Room-temperature ultraviolet lasing in [0001] oriented zinc oxide nanorods grown on silicon and fuse...
157 p.As a functional oxide material, zinc oxide (ZnO) has substantial research importance for its s...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...
Ultraviolet lasing from single zinc oxide nanowires is demonstrated at room temperature. Near-field ...
Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method bas...
This paper reviews several topics related to optically pumped ZnO nanowire lasers. A systematic stud...
[[abstract]]Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrat...
Zinc oxide, with its direct wide bandgap and high exciton binding energy, is a promising material fo...
The topic of this dissertation is embedded into the new-born field of inorganic nanowires. The resea...
Nanotechnology has attracted huge interest in many fields such as optics, electronics, as well as bi...
Scanning near-field optical microscope (SNOM) was employed to investigate the room temperature photo...
Nanotechnology has attracted huge interest in many fields such as optics, electronics, as well as bi...
Over the past few years, a little word with big potential has been rapidly entering into the world's...
The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemic...
Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric const...
Room-temperature ultraviolet lasing in [0001] oriented zinc oxide nanorods grown on silicon and fuse...
157 p.As a functional oxide material, zinc oxide (ZnO) has substantial research importance for its s...
Zinc oxide (ZnO) is a wide band-gap semiconductor material (Eg=3.37 eV) characterized by many promis...