Measurement at millimeter-wave frequencies are prone to parasitic effects which distort the overall results. Especially the use of RF probes introduces unknown distortions, even after the measurement setup is calibrated. This works investigates these distortions based on electromagnetic field simulations of integrated circuits in conjunction with models of the used RF probes. This allows to comprehend the observed distortions and successfully resolve the root of the distortions
On-wafer measurements are essential for the characterization of electronic devices at millimeter-wav...
A measurement system based on coaxial wafer probes has been developed that allows, for the first tim...
In order to be able to measure and validate an antenna design in the mm-wave frequency range it must...
Measurement at millimeter-wave frequencies are prone to parasitic effects which distort the overall ...
RF probe measurements are widely used for characterizing circuits in the millimeter-wave frequency r...
Distortions in a RF measurement system can adversely impact the characteristics of the measured sign...
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measu...
International audienceIn this letter, we present a method to extract the scattering parameters of a ...
The influence of the use of on-wafer probes for mm-wave antenna-on-chip (AoC) measurements is invest...
\u3cp\u3eThe characterization of physically small antennas in the millimeter-wave range has proven t...
International audienceThe measurement of the figures of merit (FOMs) of an advanced and miniaturized...
The measurement of series extrinsic resistances of MOSFETs is not straightforward and the gate resis...
This TD describes the possible factors that can introduce the discrepancy between the measurement an...
The crosstalk or leakage between probes may cause significant errors and uncertainties for on-wafer ...
On-wafer measurements are essential for the characterization of electronic devices at millimeter-wav...
A measurement system based on coaxial wafer probes has been developed that allows, for the first tim...
In order to be able to measure and validate an antenna design in the mm-wave frequency range it must...
Measurement at millimeter-wave frequencies are prone to parasitic effects which distort the overall ...
RF probe measurements are widely used for characterizing circuits in the millimeter-wave frequency r...
Distortions in a RF measurement system can adversely impact the characteristics of the measured sign...
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measu...
International audienceIn this letter, we present a method to extract the scattering parameters of a ...
The influence of the use of on-wafer probes for mm-wave antenna-on-chip (AoC) measurements is invest...
\u3cp\u3eThe characterization of physically small antennas in the millimeter-wave range has proven t...
International audienceThe measurement of the figures of merit (FOMs) of an advanced and miniaturized...
The measurement of series extrinsic resistances of MOSFETs is not straightforward and the gate resis...
This TD describes the possible factors that can introduce the discrepancy between the measurement an...
The crosstalk or leakage between probes may cause significant errors and uncertainties for on-wafer ...
On-wafer measurements are essential for the characterization of electronic devices at millimeter-wav...
A measurement system based on coaxial wafer probes has been developed that allows, for the first tim...
In order to be able to measure and validate an antenna design in the mm-wave frequency range it must...