This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold...
A general statistical model to describe the generation of statistically independent defects in gate...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Aggressive device scaling has made it imperative to account for process variations in the design flo...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical Vt variations lead to large variations of leakage current, which cause statistical volta...
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simul...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Transient Signal Analysis is a digital device testing method that is based on the analysis of voltag...
© 1993-2012 IEEE. Advanced scaling and the introduction of new materials in the metal-oxide-semicond...
Transient Signal Analysis is a digital device testing method that is based on the analysis of voltag...
Ce travail porte sur la caractérisation et la modélisation des fluctuations aléatoires des paramètre...
A general statistical model to describe the generation of statistically independent defects in gate...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Aggressive device scaling has made it imperative to account for process variations in the design flo...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical Vt variations lead to large variations of leakage current, which cause statistical volta...
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simul...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
Transient Signal Analysis is a digital device testing method that is based on the analysis of voltag...
© 1993-2012 IEEE. Advanced scaling and the introduction of new materials in the metal-oxide-semicond...
Transient Signal Analysis is a digital device testing method that is based on the analysis of voltag...
Ce travail porte sur la caractérisation et la modélisation des fluctuations aléatoires des paramètre...
A general statistical model to describe the generation of statistically independent defects in gate...
session C2L-F: Compact Modeling of Electron DevicesInternational audienceThis work explores, for the...
session posterInternational audienceThis paper proposes a novel methodology for modeling process rel...