This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS transistors using array-based integrated circuits (ICs), through which a better understanding of CMOS reliability could be attained. This setup addresses the issues that come with the need for a trustworthy statistical characterization of these effects: testing a very large number of devices accurately but, also, in a timely manner. The setup consists of software and hardware components that provide a user-friendly interface to perform the statistical characterization of CMOS transistors. Five different electrical tests, comprehending time-zero and time-dependent variability effects, can be carried out. Test preparation ...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...
Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologi...
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Altres ajuts: this work has been supported in part by the P12-TIC-1481 Project (funded by Junta de A...
Statistical characterization of CMOS transistor variability phenomena in modern nanometer technolog...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Time-zero variability, bias temperature instability (BTI) and random telegraph noise (RTN) are issue...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an integral part of the electronic...
.In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...
Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologi...
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Altres ajuts: this work has been supported in part by the P12-TIC-1481 Project (funded by Junta de A...
Statistical characterization of CMOS transistor variability phenomena in modern nanometer technolog...
Variability phenomena in CMOS technologies have become a growing concern in recent years. One of the...
Time-zero variability, bias temperature instability (BTI) and random telegraph noise (RTN) are issue...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
As the minimum transistor length reaches the deca-nanometer scale, both time-zero and time-dependent...
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an integral part of the electronic...
.In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have b...