Growth, characterization and design of INP-based strained-layer multiple quantum wells for optical modulator devices

Experimental methods and background -- Sample cleaning -- Growth of strained-layer, InP-based thin film materials by MOVPE -- Structural characterization by x-ray diffraction -- Wet chemical etching of InP in HCI-based solutions -- Au-based contact contact metallizations on InP -- Measurement of field-dependent absorption curves by photocurrent detection -- Detailed balance efficiency limit in quantum well solar cells -- Strain and relaxation in multiple quantum well stacks -- Band alignment engineering for the quantum-confined stark effect -- Band alignment engineering for high-speed, low drive field quantum-confined stark effect devices