Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation
- Konstantinou, D.
- Caillaud, C.
- Shivan, T.
- Rommel, S.
- Johannsen, U.
- Blache, F.
- Mallecot, F.
- Krozer, V.
- Monroy, I. Tafur
Publication date
October 2020
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This work introduces a subsystem level cosimulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-Traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthesized by high speed transistors. The proposed broadband component achieves competitive performance characteristics exhibiting high gain
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